Leakage current of Al- Or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering

Journal of Materials Research

Volumn 13, Issue 4, 1998, Pages 990-994

  In, Tae Gyoung ^a   Baik, Sunggi ^a   Kim, Sangsub ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Sunchon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; BARIUM COMPOUNDS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GRAIN BOUNDARIES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; NIOBIUM; SCHOTTKY BARRIER DIODES; SUBSTRATES;

BARIUM STRONTIUM TITANATE; BREAKDOWN VOLTAGE; LEAKAGE CURRENT DENSITY;

THIN FILMS;

EID: 0032047068     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0139     Document Type: Article

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