A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO3 and RuO2/Ru/TiN/TiSia; storage nodes for Gb-Scale DRAM's

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1076-1083

  Yamamichi, Shintaro ^a   Lesaicherre, Pierre Yves ^a   Yamaguchi, Hiromu ^a   Takemura, Koichi ^a   Sone, Shuji ^a   Yabuta, Hisato ^a   Sato, Kiyoyuki ^a   Tamura, Takao ^a   Nakajima, Ken ^a   Ohnishi, Sadayuki ^a   Tokashiki, Ken ^a   Hayashi, Yukihiro ^a   Kato, Yoshitake ^a   Miyasaka, Yoichi ^a   Yoshida, Masaji ^a   Ono, Haruhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING;

DRAM STACKED CAPACITOR TECHNOLOGY;

CAPACITOR STORAGE;

EID: 0031176096     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595934     Document Type: Article

References (14)

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