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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1548-1552

Fabrication and electrical characterization of Pt/(Ba,Sr)TiO3/Pt capacitors for ultralarge-scale integrated dynamic random access memory applications

(7) Park, Soon Oh a Hwang, Cheol Seong a Cho, Hag Ju a Kang, Chang Suk a Kang, Ho Kyu a Lee, Sang In a Lee, Moon Yong a

a SAMSUNG Electronics (South Korea)

Author keywords

(Ba,Sr)TiO3; Annealing; Capacitance; DRAM; Leakage current; Pt

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; CHARACTERIZATION; CURRENT DENSITY; ELECTRIC PROPERTIES; FABRICATION; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXIDATION; RANDOM ACCESS STORAGE; SILICON WAFERS;

LEAD BARIUM STRONTIUM TITANATE PLATINUM CAPACITOR; POSTANNEALING; THERMALLY OXIDIZED SILICON WAFER; ULTRALARGE SCALE INTEGRATED DYNAMIC RANDOM ACCESS MEMORY;

FERROELECTRIC MATERIALS;

EID: 0030080488 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1548 Document Type: Article

Times cited : (67)

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