Effects of post-annealing on dielectric properties of (Ba, Sr)TiO3 thin films prepared by liquid source chemical vapor deposition

IEICE Transactions on Electronics

Volumn E81-C, Issue 4, 1998, Pages 497-503

  Horikawa, Tsuyoshi ^a   Tanimura, Junji ^a   Kawahara, Takaaki ^a   Yamamuka, Mikio ^a   Tarutani, Masayoshi ^a   Ono, Kouichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(ba,sr)tiof annealing; Chemical vapor deposition; Dielectric breakdown; Dielectric constant

Indexed keywords

ANNEALING; BARIUM TITANATE; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; FILM PREPARATION; LEAKAGE CURRENTS; MORPHOLOGY; PERMITTIVITY; RANDOM ACCESS STORAGE; SILICA; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); LIQUID SOURCE CHEMICAL VAPOR DEPOSITION;

THIN FILMS;

EID: 0032046809     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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