Improvements of the properties of chemical-vapor-deposited (Ba,Sr)TiO3 films through use of a seed layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6824-6828

  Choi, Young Chul ^b   Lee, Joon ^a   Lee, Byung Soo ^b  

^a Konkuk University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

(Ba,Sr)TiO3; Crystallinity; Current density; CVD; Dielectric constant; Interface; RTA; Seed layer

Indexed keywords

ANNEALING; BARIUM TITANATE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CURRENT DENSITY; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; PERMITTIVITY; STRONTIUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

BARIUM STRONTIUM TITANATE;

DIELECTRIC FILMS;

EID: 0031276171     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6824     Document Type: Article

References (19)

1. S. G. Yoon, J. C. Lee and A. Safari: J. Appl. Phys. 76 (1994) 2999.
2. N. Ichinose and T. Ogiwara: Jpn. J. Appl. Phys. 32 (1993) 4115.
3. D. M. Tahan, A. Safari and L. C. Klein: J. Am. Ceram. Soc. 79 (1996) 1593.
4. K. Abe and S. Komatsu: J. Appl. Phys. 77 (1995) 6461.
5. F. Tcheliebou and S. Baik: J. Appl. Phys. 80 (1996) 7046.
6. P. Kirlin, S. Bilodeau and P. Van Bursik: Integrat. Ferroelectr. 7 (1995) 307.
7. H. Yamaguchi, P. Y. Lesaicherre, T. Sakuma, Y. Miyasaka, A. Ishitani and M. Yoshida: Jpn. J. Appl. Phys. 32 (1994) 4069.
8. C. S. Kang, C. S. Whang, H. J. Cho, B. T. Lee, S. O. Park, J. W. Kim, H. Horii, S. I. Lee, Y. B. Koh and M. Y. Lee: Jpn. J. Appl. Phys. 35 (1996) 4890.
9. T. Kawahara, M. Yamamuka, T. Makita, K. Tsutahara, A. Yuuki, K. Ono and Y. Matsui: Jpn. J. Appl. Phys. 33 (1994) 5897.
10. K. No, J. S. Lee, W. S. Song, W. J. Lee, B. G. Yu and Z. T. Jiang: Ferroelectric Thin Films V, eds. by S. B. Desu, R. Ramesh, B. A. Tuttle, R. E. Jones and I. K. Yoo (Material Research Society, Pennsylvania, 1996) Vol. 433, p. 9.
11. H. J. Cho, H. J. Kim and H. K. Shin: Proc. 4th Korean Conf. Semiconductors (1997) p. 355.
12. S. H. Paek, J. Won, K. S. Lee, J. S. Choi and C. S. Park: Jpn. J. Appl. Phys. 35 (1996) 5757.
13. G. W. Dietz, W. Antpohler, M. Klee and R. Waser: J. Appl. Phys. 78 (1995) 6113.
14. Y. T. Kim and C. W. Lee: Jpn. J. Appl. Phys. 35 (1996) 6153.
15. B. T. Jang, D. H. Kwak and H. C. Lee: Bull. Kor. Ceram. Soc. 11 (1996) 162.
16. T. Horikawa, T. Makita, T. Kuroiwa and N. Mikami: Jpn. J. Appl. Phys. 34 (1995) 5478.
17. D. H. Kwak, B. T. Jang, S. Y. Cha and H. C. Lee: Procs. 4th Korean Conf. Semiconductors (1997) p. 347.
18. J. Lee, Y. C. Choi and B. S. Lee: Jpn. J. Appl. Phys. 36 (1997) 3644.
19. Q. X. Jia, D. S. Zhou, X. D. Wu, S. R. Foltyn, P. Tiwari and T. E. Mitchell: Integrat. Ferroelectr. 10 (1995) 73.