Reaction mechanism and electrical properties of (Ba, Sr)tiO3 films prepared by liquid source chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2530-2535

  Yamamuka, Mikio ^a   Kawahara, Takaaki ^a   Yuuki, Akimasa ^a   Ono, Kouichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(Ba, Sr)TiO3; CVD; Deposition rate; Dielectric constant; Dielectric loss tangent; DRAM; Leakage current; LSI; Step coverage; Sticking probability

Indexed keywords

BARIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ORGANIC COMPOUNDS; OXYGEN; PERMITTIVITY; PROBABILITY; RANDOM ACCESS STORAGE; REACTION KINETICS; THERMAL EFFECTS;

BARIUM STRONTIUM TITANATE; DIELECTRIC CONSTANT; LIQUID SOURCE CHEMICAL VAPOR DEPOSITION; STEP COVERAGE; STICKING PROBABILITY;

THIN FILMS;

EID: 0030120695     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2530     Document Type: Article

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