A physics-based compact model for nano-scale DG and FD/SOI MOSFETs

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 274-277

  Possum, Jerry G ^a   Ge, Lixin ^a   Chiang, Meng Hsueh ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

Compact model; DG MOSFET; FD SOI MOSFET; Nano scale CMOS; Predictive circuit simulation

Indexed keywords

BOUNDARY CONDITIONS; CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; COMPACT DISKS; COMPUTER SIMULATION; ELECTRIC FIELDS; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON DISTRIBUTION; PREDICTIVE CONTROL SYSTEMS; ULTRATHIN FILMS;

CHANNEL DOPING DENSITIES; COMPACT MODELS; PREDICTIVE CIRCUIT SIMULATION; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 6344252806     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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