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Volumn 39, Issue 1, 2003, Pages 84-93

Reliability improvement in deep-submicron nMOSFETs by deuterium

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DEUTERIUM; ELECTRON MOBILITY; MOLECULAR VIBRATIONS; RELIABILITY; SEMICONDUCTING SILICON; SPECTROSCOPY; SUBSTRATES;

EID: 0043199867     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (40)
  • 1
    • 0030126232 scopus 로고    scopus 로고
    • Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
    • J. W. Lyding, K. Hess, and I. C. Kizilyalli: Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing. Appl. Phys. Lett., 68, p.2526-2528 (1996).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2526-2528
    • Lyding, J.W.1    Hess, K.2    Kizilyalli, I.C.3
  • 2
    • 0000204127 scopus 로고    scopus 로고
    • Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices
    • K. Cheng, J. Lee, and J. W. Lyding. Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices. Appl. Phys. Lett., 77, p.2358-2360 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 2358-2360
    • Cheng, K.1    Lee, J.2    Lyding, J.W.3
  • 5
    • 0000204127 scopus 로고    scopus 로고
    • Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices
    • K. Cheng, J. Lee, and J. W. Lyding: Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices. Appl. Phys. Lett., 77, p.2358-2360 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 2358-2360
    • Cheng, K.1    Lee, J.2    Lyding, J.W.3
  • 6
    • 0035448046 scopus 로고    scopus 로고
    • Deuterium passivation of interface traps in MOS devices
    • K. Cheng, K. Hess, and J. W. Lyding: Deuterium passivation of interface traps in MOS devices. IEEE Electron Device Letters, 22, p.441-443 (2001).
    • (2001) IEEE Electron Device Letters , vol.22 , pp. 441-443
    • Cheng, K.1    Hess, K.2    Lyding, J.W.3
  • 7
    • 0034205895 scopus 로고    scopus 로고
    • A study of the effect of deuterium on stress-induced leakage current
    • Y. Mitani, H. Satake, H. Itoh, and A. Toriumi: A study of the effect of deuterium on stress-induced leakage current. Jpn. J. Appl. Phys., 39, L564-L566 (2000).
    • (2000) Jpn. J. Appl. Phys. , vol.39
    • Mitani, Y.1    Satake, H.2    Itoh, H.3    Toriumi, A.4
  • 8
    • 0036475249 scopus 로고    scopus 로고
    • On interface and oxide degradation in VLSI MOSFETs-Part I: Deuterium effect in CHE stress regime
    • D. Esseni, J. D. Bude, and L. Selmi: On interface and oxide degradation in VLSI MOSFETs-Part I: deuterium effect in CHE stress regime. IEEE Electron Device Letters, 49, p.247-253 (2002).
    • (2002) IEEE Electron Device Letters , vol.49 , pp. 247-253
    • Esseni, D.1    Bude, J.D.2    Selmi, L.3
  • 9
    • 0032489754 scopus 로고    scopus 로고
    • Electrical and physical characterization of deuterium sinter on submicron devices
    • H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, and K. Harvey: Electrical and physical characterization of deuterium sinter on submicron devices. Appl. Phys. Lett., 72, p.1721-1732 (1998).
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1721-1723
    • Mogul, H.C.1    Cong, L.2    Wallace, R.M.3    Chen, P.J.4    Rost, T.A.5    Harvey, K.6
  • 10
    • 0001446932 scopus 로고
    • Atomic-scale desorption through electronic and vibrational excitation mechanisms
    • T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup: Atomic-scale desorption through electronic and vibrational excitation mechanisms. Science, 268, p.1590-1592 (1995).
    • (1995) Science , vol.268 , pp. 1590-1592
    • Shen, T.-C.1    Wang, C.2    Abeln, G.C.3    Tucker, J.R.4    Lyding, J.W.5    Avouris, Ph.6    Walkup, R.E.7
  • 11
    • 0000567901 scopus 로고    scopus 로고
    • Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)
    • E. T. Foley, A. F. Kam, J. W. Lyding, and Ph. Avouris: Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100). Phys. Rev. Lett., 80, p.1336-1339 (1998).
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 1336-1339
    • Foley, E.T.1    Kam, A.F.2    Lyding, J.W.3    Avouris, Ph.4
  • 13
    • 4243211883 scopus 로고    scopus 로고
    • Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology
    • J. W. Lyding, K. Hess, G. C. Abeln, D. S. Thompson, J. S. Moor, M. C. Hersam, E. T. Foly, J. Lee, Z. Chen, S. T. Hwang, H. Choi. Ph. Avouris, and I. C. Kizilyalli: Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology. Appl. Surf. Sci., 130-131, p.221-230 (1998).
    • (1998) Appl. Surf. Sci. , vol.130-131 , pp. 221-230
    • Lyding, J.W.1    Hess, K.2    Abeln, G.C.3    Thompson, D.S.4    Moor, J.S.5    Hersam, M.C.6    Foly, E.T.7    Lee, J.8    Chen, Z.9    Hwang, S.T.10    Choi, H.11    Avouris, Ph.12    Kizilyalli, I.C.13
  • 14
    • 0021401123 scopus 로고
    • Structure-enhanced MOSFET degradation due to hot-electron injection
    • F. C. Hsu and H. R. Grinolds: Structure-enhanced MOSFET degradation due to hot-electron injection. IEEE Trans. Electron Device Letters, 5, p.71-74 (1984).
    • (1984) IEEE Trans. Electron Device Letters , vol.5 , pp. 71-74
    • Hsu, F.C.1    Grinolds, H.R.2
  • 15
    • 0002509664 scopus 로고    scopus 로고
    • Process stability of deuterium-annealed MOSFETs
    • W. F. Clark et al.: Process stability of deuterium-annealed MOSFETs. IEEE Trans. Electron Device Letters, 20, 1, p.48-50 (1999).
    • (1999) IEEE Trans. Electron Device Letters , vol.20 , Issue.1 , pp. 48-50
    • Clark, W.F.1
  • 16
    • 36849135840 scopus 로고
    • Desorption from surfaces by slow-electron impact
    • D. Menzel and R. Gomer: Desorption from surfaces by slow-electron impact. J. Chem. Phys., 40, p.1164-1170 (1964).
    • (1964) J. Chem. Phys. , vol.40 , pp. 1164-1170
    • Menzel, D.1    Gomer, R.2
  • 19
    • 0001504797 scopus 로고    scopus 로고
    • Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption
    • K. Hess, B. Tuttle, F. Register, and D. K. Ferry: Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption. Appl. Phys. Lett., 75, p.3147-3149 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3147-3149
    • Hess, K.1    Tuttle, B.2    Register, F.3    Ferry, D.K.4
  • 20
    • 0032180424 scopus 로고    scopus 로고
    • Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime
    • K. Hess, F. Register, B. Tuttle, J. W. Lyding, I. C. Kizilyalli: Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime. Physica E 3, p.1-7 (1998).
    • (1998) Physica E , vol.3 , pp. 1-7
    • Hess, K.1    Register, F.2    Tuttle, B.3    Lyding, J.W.4    Kizilyalli, I.C.5
  • 22
    • 0001113062 scopus 로고    scopus 로고
    • Comment on "Reduction of hot electron degradation in metal oxide semiconductors by deuterium processing"
    • [Appl. Phys. Lett. 68, p.2526 (1996)]
    • C. G. Van de Walle and W. B. Jackson: Comment on "Reduction of hot electron degradation in metal oxide semiconductors by deuterium processing" [Appl. Phys. Lett. 68, p.2526 (1996)], Appl. Phys. Lett., 69, p.2441-2441 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2441
    • Van De Walle, C.G.1    Jackson, W.B.2
  • 24
    • 0000756527 scopus 로고    scopus 로고
    • Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon
    • B. Tuttle and C. G. Van de Walle: Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon. Phys. Rev. B, 59, p.12884-12889 (1999).
    • (1999) Phys. Rev. B , vol.59 , pp. 12884-12889
    • Tuttle, B.1    Van De Walle, C.G.2
  • 25
    • 0000620328 scopus 로고    scopus 로고
    • Exchange of deeply trapped and interstitial hydrogen in silicon
    • B. Tuttle and C. G. Van de Walle, and J. B. Adams: Exchange of deeply trapped and interstitial hydrogen in silicon. Phys. Rev. B, 59, p.5493-5497 (1999).
    • (1999) Phys. Rev. B , vol.59 , pp. 5493-5497
    • Tuttle, B.1    Van De Walle, C.G.2    Adams, J.B.3
  • 26
    • 0001174156 scopus 로고    scopus 로고
    • Hydrogen in silicon: Fundamental properties and consequences for devices
    • C. G. Van de Walle: Hydrogen in silicon: Fundamental properties and consequences for devices. J. Vac. Sci. Technol. A, 16, p.1767-1771 (1998).
    • (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 1767-1771
    • Van De Walle, C.G.1
  • 27
    • 0034246440 scopus 로고    scopus 로고
    • Isotope shift and broadening of Si-D bending vibration on Si(111)
    • S. Watanabe: Isotope shift and broadening of Si-D bending vibration on Si(111). Applied Surface Science, 162-163, p.146-151 (2000).
    • (2000) Applied Surface Science , vol.162-163 , pp. 146-151
    • Watanabe, S.1
  • 29
    • 0000668838 scopus 로고    scopus 로고
    • D-Si(111)(1×1) surface for the study of silicon etching in aqueous solutions
    • H. Luo and C. E. P. Chidsey: D-Si(111)(1×1) surface for the study of silicon etching in aqueous solutions. Appl. Phys. Lett., 72, p.477-479 (1998).
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 477-479
    • Luo, H.1    Chidsey, C.E.P.2
  • 30
    • 0000415984 scopus 로고    scopus 로고
    • Chemical structure of dihydride phase on saturated H-chemisorbed Si surfaces
    • S. Watanabe: Chemical structure of dihydride phase on saturated H-chemisorbed Si surfaces. J. Chem. Phys., 108, p.5965 (1998).
    • (1998) J. Chem. Phys. , vol.108 , pp. 5965
    • Watanabe, S.1
  • 31
    • 0000835573 scopus 로고
    • Surface infrared spectroscopy
    • Y. J. Chabal: Surface infrared spectroscopy. Surf. Sci. Rep., 8, p.211-357 (1988).
    • (1988) Surf. Sci. Rep. , vol.8 , pp. 211-357
    • Chabal, Y.J.1
  • 32
    • 0000399466 scopus 로고    scopus 로고
    • Defect generation in field-effect transistors under channel-hot-electron stress
    • D. J. DiMaria: Defect generation in field-effect transistors under channel-hot-electron stress. J. Appl. Phys., 87, p.8707-8715 (2000).
    • (2000) J. Appl. Phys. , vol.87 , pp. 8707-8715
    • DiMaria, D.J.1
  • 39
    • 0035848126 scopus 로고    scopus 로고
    • Hydrogen passivation and activation of oxygen complexes in silicon
    • S. N. Rashkeev, M. di Ventra, and S. T. Pantelides: Hydrogen passivation and activation of oxygen complexes in silicon. Appl. Phys. Lett., 78, p.1571-1573 (2001).
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 1571-1573
    • Rashkeev, S.N.1    Di Ventra, M.2    Pantelides, S.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.