Electrical and physical characterization of deuterium sinter on submicron devices

Applied Physics Letters

Volumn 72, Issue 14, 1998, Pages 1721-1723

  Mogul, H C ^a   Cong, L ^a   Wallace, R M ^a   Chen, P J ^a   Rost, T A ^a   Harvey, K ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SINTERING; STRESSES;

CHANNEL HOT CARRIER; ELECTRICAL STRESS; FORMING GAS SINTER; NITRIDE SIDEWALL TECHNOLOGY;

DEUTERIUM;

EID: 0032489754     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121163     Document Type: Article

References (6)

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3. H. C. Mogul, T. A. Rost, and D. G. Lin, IEEE Trans. Electron Devices 44, 388 (1997).
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5. C. T. Sah, A. Neugroschel, K. Han, and J. Kavalieros, IEEE Electron Device Lett. 17, 72 (1996).
6. H-implant in Si: standard reference material, Charles Evans & Associates, Redwood City, CA.