Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 221-230

  Lyding, J W ^a   Hess, K ^a   Abeln, G C ^a   Thompson, D S ^a   Moore, J S ^a   Hersam, M C ^a   Foley, E T ^a   Lee, J ^a   Chen, Z ^a   Hwang, S T ^a   Choi, H ^a   Avouris, Ph ^a   Kizilyalli, I C ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYOGENICS; DESORPTION; DEUTERIUM; HOT CARRIERS; HYDROGEN; NANOTECHNOLOGY; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE PHENOMENA; VACUUM APPLICATIONS;

GIANT ISOTOPE EFFECT;

SEMICONDUCTING SILICON;

EID: 4243211883     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00054-3     Document Type: Article

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