Hydrogen in silicon: Fundamental properties and consequences for devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1767-1771

  Van De Walle, Chris G ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION MECHANISMS; FIRST-PRINCIPLES CALCULATION; FUNDAMENTAL PROPERTIES; SI-H BONDS; VARIOUS CONFIGURATION;

DANGLING BONDS; DEUTERIUM; DISSOCIATION; HYDROGEN; HYDROGEN BONDS;

AMORPHOUS MATERIALS;

EID: 0001174156     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581299     Document Type: Article

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