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IEEE Electron Device Letters

Volumn 22, Issue 9, 2001, Pages 441-443

Deuterium passivation of interface traps in MOS devices

(3) Cheng, Kangguo a,b,c Hess, Karl a,b Lyding, Joseph W a,b

a IEEE (United States)

b University of Illinois at Urbana Champaign (United States)

c IBM RESEARCH (United States)

Author keywords

Deuterium; Hot carrier; Interface trap; MOS device; Oxide; Passivation; Reliability

Indexed keywords

CHANNEL HOT ELECTRON; DEUTERIUM PASSIVATION; HYDROGENATED DEVICES; INTERFACE TRAPS; OXIDE INTERFACE; SILICON INTERFACE;

DEUTERIUM; ELECTRON DEVICE TESTING; ELECTRON TRAPS; HOT CARRIERS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

MOS DEVICES;

EID: 0035448046 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.944333 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.