Breaking individual chemical bonds via STM-induced excitations

Surface Science

Volumn 363, Issue 1-3, 1996, Pages 368-377

  Avouris, Ph ^a   Walkup, R E ^a   Rossi, A R ^a   Akpati, H C ^b   Nordlander, P ^b   Shen, T C ^c   Abeln, G C ^c   Lyding, J W ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b RICE UNIVERSITY   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Density functional calculations; Electron stimulated desorption (ESD); Field effect; Hydrogen; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Tunneling

Indexed keywords

CALCULATIONS; CRACKING (CHEMICAL); CURRENT DENSITY; DESORPTION; ELECTRON ENERGY LEVELS; ENERGY TRANSFER; MOLECULAR VIBRATIONS; PROBABILITY DENSITY FUNCTION; QUENCHING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA;

BOND BREAKING; DENSITY FUNCTIONAL CALCULATIONS; ELECTRON STIMULATED DESORPTION; EXCITATION ENERGY; FIELD EFFECT;

CHEMICAL BONDS;

EID: 0030206202     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00163-X     Document Type: Article

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