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Volumn 72, Issue 4, 1998, Pages 477-479

D-Si(111)(1×1) surface for the study of silicon etching in aqueous solutions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000668838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120791     Document Type: Article
Times cited : (39)

References (16)
  • 10
    • 21544441690 scopus 로고    scopus 로고
    • note
    • 2 relative to a Ag/AgCl reference electrode with a Teflon junction (LAB-REF, Innovative Sensors, Inc.) in the same solution. The offset potential was obtained with a commercial pH 7 reference solution. A Nernstian slope of 59 mV per pH unit was confirmed with pH 4 and 10 buffer solutions.
  • 11
    • 21544444366 scopus 로고    scopus 로고
    • note
    • 4F pits the bevels of the ATR crystal and thus decreases its IR transmission. KF solutions do not induce significant losses in transmission even after a 30 min etch.
  • 12
    • 21544477722 scopus 로고    scopus 로고
    • note
    • -1 region or by x-ray photoelectron survey spectra. The coverage carbon and oxygen are both less than 1% of a monolayer by XPS narrow scan spectra.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.