Optimum structure of deposited ultrathin silicon oxynitride film to minimize leakage current

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 2038-2045

  Muraoka, K ^a   Kurihara, K ^a   Yasuda, N ^a   Satake, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS;

GATE DIRECT TUNNELING (DT);

ULTRATHIN FILMS;

EID: 0043011961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588354     Document Type: Article

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