Short range order and the nature of defects and traps in amorphous silicon oxynitride governed by the mott rule

Physical Review Letters

Volumn 81, Issue 5, 1998, Pages 1054-1057

  Gritsenko, V A ^a,b   Xu, J B ^b   Kwok, R W M ^b   Ng, Y H ^b   Wilson, I H ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001367974     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.1054     Document Type: Article

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