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Volumn 149, Issue 4, 2002, Pages

Effect of oxygen in deposited ultrathin silicon nitride film on electrical properties

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CAPACITANCE MEASUREMENT; CHEMICAL BONDS; INTERFACES (MATERIALS); NITROGEN; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON; SILICON NITRIDE; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036530970     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1461380     Document Type: Article
Times cited : (4)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.