Radical nitridation in multi-oxide process for 100nm generation CMOS technology

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 83-84

  Yasuda, Y ^a   Kimizuka, N ^a   Watanabe, K ^a   Tatsumi, T ^a   Ono, A ^a   Fukasaku, K ^a   Imai, K ^a   Nakamura, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY;

MULTI-OXIDE TECHNOLOGY;

NITRIDING;

EID: 0034784830     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)