Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1163-1168

  Lucovsky, G ^a   Wu, Y ^b   Niimi, H ^a   Yang, H ^b   Keister, J ^a   Rowe, J E ^a,c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); MONOLAYERS; NITRIDES; NITRIDING; OXIDES; REDUCTION; STACKING FAULTS; SUBSTRATES;

DIRECT TUNNELING;

DIELECTRIC MATERIALS;

EID: 0001249642     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582318     Document Type: Article

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