Capacitance technique for the determination of interface state density of metal-semiconductor contact

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1491-1493

  Chattopadhyay, P ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COBALT ALLOYS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; INTERFACES (MATERIALS); OXIDES; PLATINUM ALLOYS; SEMICONDUCTING FILMS; SURFACE PROPERTIES;

CAPACITANCE TECHNIQUE; ENERGY DISTRIBUTIONS; INTERFACE STATE DENSITY; INTERFACIAL OXIDE LAYER; METAL SEMICONDUCTOR CONTACT; SERIES RESISTANCE;

ELECTRIC CONTACTS;

EID: 0030269106     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00058-5     Document Type: Review

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