Effects of trapped charges on Hg-Schottky capacitance-voltage measurements of n-type epitaxial silicon wafers

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1308-1312

  Wang, Q ^a   Liu, D ^a   Virgo, J T ^a   Yeh, J ^a   Hillard, R J ^b  

^a Mitsubishi Silicon America   (United States)

^b Solid State Measurements Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES; SILICON WAFERS; SURFACE PHENOMENA; VOLTAGE MEASUREMENT;

ELECTRON ACCUMULATION; TRAPPED CHARGES;

ELECTRIC VARIABLES MEASUREMENT;

EID: 0034225561     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582345     Document Type: Article

References (25)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
2. B. J. Gordon, IEEE Trans. Electron Devices ED-27, 2268 (1980).
3. H. C. Theuerer, J. J. Kleimack, H. H. Loar, and M. Christensen, Proc. IRE 48, 1642 (1960).
4. D. S. Yaney and C. W. Pearce, Proceedings of the 1981 International Electron Device Meeting, IEEE (1981), p. 236.
5. F. E. Holmes and C. A. T. Salama, Solid-State Electron. 17, 791 (1974).
6. J. L. Moll and I. M. Ross, Proc. IRE 44, 72 (1956).
7. R. S. Payne, R. J. Scavuzzo, K. H. Olson, J. M. Nacci, and R. A. Moline, IEEE Trans. Electron Devices ED-21, 273 (1974).
8. F. Priolo, G. Mannino, and M. Micciche, Appl. Phys. Lett. 72, 3011 (1998).
9. P. A. Stolk, D. J. Eaglesham, H. J. Gossman, and J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995).
10. ASTM Standard F1392-93, Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe, 10.05.
11. D. L. Rehrig and C. W. Pearce, Semicond. Int. 3, 151 (1980).
12. P. J. Severin and G. J. Poodt, J. Electrochem. Soc. 119, 1284 (1972).
13. K. H. Zaininger and F. P. Herman, Solid State Technol. 13, 46 (1970).
14. I. Amron, Electrochem. Technol. 5, 94 (1967).
15. H. J. Gossman and J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995).
16. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
17. D. J. DiMaria, D. R. Young, and D. W. Ormond, Appl. Phys. Lett. 31, 680 (1977).
18. D. Liu and K. C. Kao, Appl. Phys. (N.Y.) 69, 2498 (1991).
19. D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. A. Reber, Jr., J. Appl. Phys. 84, 6141 (1998).
20. Q. Wang, D. Liu, and J. Yeh, Mater. Res. Soc. Symp. Proc. 555, 209 (1999).
21. B. J. Hillard, Application Notes (1997).
22. Application Notes from Solid Measurement, Inc. (1990).
23. D. M. Fleetwood. IEEE Trans. Nucl. Sci. 44, 1826 (1997).
24. E. H. Nicollian and A. Goetzberger, Appl. Phys. Lett. 7, 216 (1965).
25. M. Itsumi, N. Shiono, and M. Shimaya, J. Appl. Phys. 73, 7515 (1993).