Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Solid-State Electronics

Volumn 39, Issue 1, 1996, Pages 83-87

  Ayyildiz, Enise ^a   Türüt, Abdulmecit ^a   Efeoǧlu, Hasan ^a   Tüzemen, Sebahattin ^a   Saǧlam, Mustafa ^a   Yoǧurtçu, Y Kemal ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MANUFACTURE; SPATIAL VARIABLES MEASUREMENT; SUBSTRATES; THICKNESS MEASUREMENT;

APPLIED VOLTAGE DROP; BARRIER HEIGHT; INTERFACIAL LAYER; SEMICONDUCTOR BULK THICKNESS; SERIES RESISTANCE;

SCHOTTKY BARRIER DIODES;

EID: 0029736574     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00093-9     Document Type: Article

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