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Volumn 3, Issue 8, 2002, Pages 701-704

Determination of the density distribution of interface states from high- and low-frequency capacitance characteristics of the tin/organic pyronine-B/p-type silicon structure

(3) Çakar, Muzaffer a,c Temirci, Cabir b Türüt, Abdulmecit a

a ATATÜRK UNIVERSITY (Turkey)

b YUZUNCU YIL UNIVERSITY (Turkey)

c KAHRAMANMARAS SUTCU IMAM UNIVERSITY (Turkey)

Author keywords

Capacitance spectroscopy; Diodes; Interfaces; Materials science; Semiconductors

Indexed keywords

CAPACITANCE; DIODES; INTERFACES (MATERIALS); MATERIALS SCIENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; TIN;

CAPACITANCE CHARACTERISTICS; CAPACITANCE SPECTROSCOPY; DENSITY DISTRIBUTIONS; INTERFACE STATE DENSITY; INTERFACE STATE ENERGY DISTRIBUTION; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTOR STRUCTURE; SILICON STRUCTURES;

INTERFACE STATES;

PYRONINE; SILICON; TIN;

ARTICLE; DENSITY GRADIENT; DIODE; MATERIAL STATE; MATHEMATICAL ANALYSIS; SEMICONDUCTOR; SPECTROSCOPY;

EID: 0037119306 PISSN: 14394235 EISSN: None Source Type: Journal
DOI: 10.1002/1439-7641(20020816)3:8<701::AID-CPHC701>3.0.CO;2-R Document Type: Article

Times cited : (21)

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