GaAs(111)B(√19×√19)R23.4° surface reconstruction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1597-1605

  Farrell, H H ^a   Lu, Jun ^b   Schultz, B D ^b   Denison, A B ^a   Palmstrom C J ^b  

^a Bechtel BWXT Idaho LLC   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMS; ELECTRONS; GALLIUM; MOLECULAR BEAM EPITAXY; MULTILAYERS; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; SURFACE TREATMENT; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTISITE ATOMS; BILAYER; EPITAXIAL GROWTH SELF ASSEMBLING NANOSTRUCTURES; ISLAND FORMATION; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535362     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387460     Document Type: Conference Paper

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