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Volumn 511, Issue 1-3, 2002, Pages 323-330
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Surface reconstruction, screw dislocations and anisotropic step flow growth of MnAs on GaAs(1 1 1)B substrates
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Author keywords
Gallium arsenide; Manganese; Metal semiconductor magnetic thin film structures; Molecular beam epitaxy; Scanning tunneling microscopy; Step formation and bunching; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography
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Indexed keywords
CHEMICAL RELAXATION;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
MAGNETIC THIN FILMS;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING MANGANESE COMPOUNDS;
SCREW DISLOCATIONS;
SURFACE ROUGHNESS;
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EID: 0036608908
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01515-7 Document Type: Article |
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Times cited : (29)
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References (30)
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