Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

Journal of Applied Physics

Volumn 83, Issue 3, 1998, Pages 1379-1383

  Grandjean, N ^a   Massies, J ^a   Vennegues P ^a   Leroux, M ^a   Demangeot, F ^b   Renucci, M ^b   Frandon, J ^b  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001206719     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366840     Document Type: Article

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