Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 41-47

  Xue, Q K ^a,b   Xue, Q Z ^a   Kuwano, S ^a   Nakayama, K ^a   Sakurai, T ^a   Tsong, I S T ^c   Qiu, X G ^d   Segawa, Y ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF PHYSICS   (China)

^c ARIZONA STATE UNIVERSITY   (United States)

^d INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

A1. High resolution X ray diffraction; A1. Surface structure; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

WURTZITES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035399113     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01048-X     Document Type: Article

References (44)

1. S. Nakamura et al., Appl. Phys. Lett. 72 (1998) 211.
2. S. Nakamura et al., Jpn. J. Appl. Phys. 37 (1998) L309.
3. E.S. Hellman, MRS Internet J. Nitride Semicond. Res. 3 (1998) 11.
4. A.R. Smith et al., Appl. Phys. Lett. 72 (1998) 2114.
5. C.T. Foxon et al., Surf. Sci. 421 (1999) 377.
6. F.A. Ponce et al., Appl. Phys. Lett. 69 (1996) 337.
7. B. Daudin et al., Appl. Phys. Lett. 69 (1996) 2480.
8. M. Seelmann-Eggebert et al., Appl. Phys. Lett. 71 (1997) 2635.
9. V.M. Bermudez, D.D. Koleske, A.E. Wickenden, Appl. Surf. Sci. 126 (1998) 69.
10. M.E. Lin et al., Appl. Phys. Lett. 62 (1993) 702.
11. W.C. Hughes et al., J. Vac. Sci. Technol. B 13 (1995) 1571.
12. O.H. Hughes et al., J. Vac. Sci. Technol. B 16 (1998) 2237.
13. A.R. Smith et al., Surf. Sci. 423 (1999) 70.
14. K. Iwata et al., Jpn. J. Appl. Phys. 35 (1996) L289.
15. A.R. Smith et al., Phys. Rev. Lett. 79 (1997) 3934.
16. A.R. Smith et al., J. Vac. Sci. Technol. B 16 (1998) 2242.
17. A.R. Smith et al., MRS Internet J. Nitride Semicond. Res. 3 (1998) 12.
18. Q.Z. Xue et al., Phys. Rev. B 59 (1999) 12604.
19. X.G. Qiu et al., Appl. Phys. Lett. 77 (2000) 1316.
20. Q.K. Xue et al., Phys. Rev. Lett. 82 (1999) 3077.
21. Q.K. Xue et al., Jpn. J. Appl. Phys. 36 (1997) L1486.
22. Q.Z. Xue et al., Appl. Phys. Lett. 74 (1999) 2468.
23. U. Starke, Phys. Stat. Sol. 202 (1997) 475.
24. A.J. Van Bommel, J.E. Crombeen, A. Van Tooren, Surf. Sci. 48 (1975) 463.
25. L. Muehlhoff et al., J. Appl. Phys. 60 (1986) 2842.
26. R. Kaplan, Surf. Sci. 215 (1989) 111.
27. L. Li, I.S.T. Tsong, Surf. Sci. 351 (1996) 141.
28. L. Li, Y. Hasegawa, T. Sakurai, J. Appl. Phys. 80 (1996) 2524.
29. M.A. Kulakov, G. Henn, B. Bullemer, Surf. Sci. 346 (1996) 49.
30. A.A. Burk Jr., L.B. Rowland, J. Crystal Growth 167 (1996) 586.
31. P. Mårtensson, F. Owman, L.I. Johansson, Phys. Stat. Sol. B 202 (1997) 501.
32. J.E. Northrup, J. Neugebauer, Phys. Rev. B 52 (1995) R17001.
33. F. Owman, C. Hallin, P. Martensson, E. Janzen, J. Crystal Growth 167 (1996) 391.
34. Q. Z. Xue, Q. K. Xue, T. Sakurai, unpublished.
35. Q.K. Xue et al., Thin Solid Films 367 (2000) 149.
36. T. Zywietz, J. Neugebauer, M. Scheffler, Appl. Phys. Lett. 73 (1998) 487.
37. J. Neugebauer et al., Phys. Rev. Lett. 80 (1998) 3097.
38. G. Feuillet et al., Appl. Phys. Lett. 70 (1997) 1025.
39. E.J. Tarsa et al., J. Appl. Phys. 82 (1997) 5472.
40. B. Heying et al., Appl. Phys. Lett. 68 (1996) 643.
41. J.E. Ayers, J. Crystal Growth 135 (1993) 71.
42. Y. Shreter, Y. Rebane, Proceedings of the International Conference on Extended Defects in Semiconductors-96, Gien, France, 7-12 September, 1996.
43. S. Fischer et al., J. Crystal Growth 189/190 (1998) 556.
44. D.M. Hofmann et al., Phys. Rev. B 52 (1995) 16702.