Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 11, 1996, Pages 7957-7964

  Kawachi, Genshiro ^a   Graeff, Carlos F O ^b   Brandt, Martin S ^b   Stutzmann, Martin ^b  

^a HITACHI LTD   (Japan)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000814080     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.7957     Document Type: Article

References (29)

1. D. J. Lepine, Phys. Rev. B 6, 436 (1972).
2. I. Solomon, Solid State Commun. 20, 215 (1976).
3. M. X. Yan, K. P. Honewood and B. C. Cavenett, J. Phys. C 19, L189 (1986).
4. Z. Kachwalla and D. J. Miller, J. Appl. Phys. 62, 2848 (1987).
5. M. A. Jupina and P. M. Lenahan, IEEE Trans. Nucl. Sci. 36, 1800 (1989).
6. R. L. Vranch, B. Henderson and M. Pepper, Appl. Phys. Lett 52, 1161 (1988).
7. W. K. Schubert and P. M. Lenahan, Appl. Phys Lett. 43, 497 (1983).
8. C. H. Seager, E. L. Venturini and W. K. Schubert, J. Appl. Phys. 71, 5059 (1992).
9. I. Solomon, D. K. Biegelsen and J. S. Knights, Solid State Commun. 22, 595 (1977).
10. N. Kishimoto, K. Morigaki and K. Maurakami, J. Phys. Soc. Jpn. 50, 1970 (1981).
11. H. Dersch, L. Schweitzer and J. Stuke, Phys. Rev. B 28, 4678 (1983).
12. K. Lips, S. Schütte and W. Fuhs, Philos. Mag. B 65, 945 (1992).
13. M. S. Brandt and M. Stutzmann, Phys. Rev. B 43, 5184 (1991).
14. K. Lips and W. Fuhs, J. Appl. Phys. 74, 3993 (1993).
15. A. J. Snell, K. D. Mackenzie, W. E. Spear, P. G. LeComber and A. J. Hughes, Apply. Phys. 24, 357 (1981).
16. K. Rosan, in Amorphous and Microcrystalline Semiconductor Devices-Optelectronic Devices, edited by J. Kanicki (Artech House Inc., Norwood, 1991), p. 241.
17. M. J. Powell, IEEE Trans. Electron Devices ED-36, 2753 (1989).
18. H. Yamamoto, H. Matsumaru, K. Shirahashi, M. Nakatani, A. Sasano, N. Konishi, K. Tsutsui, and T. Tsukada, in Proceedings of International Electron Device Meeting (IEEE, San Francisco, 1990), p. 851.
19. C. F. O. Graeff, M. S. Brandt, M. Stutzmann and M. J. Powell, Phys. Rev. B 52, 4680 (1995).
20. G. Kawachi, C. F. O. Graeff, M. S. Brandt, and M. Stutzmann (unpublished).
21. M. S. Brandt and M. Stutzmann, J. Non-Cryst. Solids 164-166, 547 (1993).
22. M. Hack and A. G. Lewis, IEEE Trans. Electron Device Lett. EDL-12, 203 (1991).
23. J. G. Fossum, R. Sundaresan, and M. Matloubian, IEEE Trans. Electron Device Lett. EDL-8, 544 (1987).
24. W. L. Warren, P. M. Lenahan and S. E. Curry, Phys. Rev. Lett. 65, 207 (1990).
25. H. Yan, M. Kumeda, N. Ishii and T. Shimizu, Jpn. J. Appl. Phys. 32, 876 (1993).
26. D. K. Biegelsen and M. Stutzmann, Phys. Rev. B 33, 3006 (1986).
27. J. Fossum, A. Ortiz-Conde, H. Shichijo, and S. Banerjee, IEEE Trans. Electron Devices ED-41, 1878 (1985).
28. H. Dersch and L. Schweitzer, Philos. Mag. B 50, 397 (1984).
29. N. F. Mott, J. Non-Cryst. Solids 1, 1 (1968).