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Journal of Non-Crystalline Solids

Volumn 303, Issue 1, 2002, Pages 162-166

Electron spin resonance analysis of interfacial Si dangling bond defects in stacks of ultrathin SiO2, Al2O3, and ZrO2 layers on (1 0 0)Si

(3) Stesmans, A a Afanas'ev, V V a Houssa, M a

a UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; INTERFACES (MATERIALS); MOS DEVICES; PARAMAGNETIC RESONANCE; STRESS ANALYSIS; ULTRATHIN FILMS;

HYDROGEN PHOTODESORPTION;

SEMICONDUCTING SILICON;

EID: 0036567846 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(02)00979-1 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.