Sige HBT performance and reliability trends through fT of 350GHz

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 332-338

  Freeman, Greg ^a   Rieh, Jae Sung ^a   Jagannathan, Basanth ^a   Yang, Zhijian ^a   Guarin, Fernando ^a   Joseph, Alvin ^a   Ahlgren, David ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Avalanche; Device Scaling; SiGe HBT; Thermal

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; HOT CARRIERS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

CIRCUIT DESIGN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0038649073     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (29)

1. J.-S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. -J, Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker*, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, "SiGe HBTs with Cutoff Frequency of 350GHz," Proc., International Electron Devices Meeting, Dec. 2002, pp. 771- 774
2. D. R. Greenberg, B. Jagannathan, S. Sweeney, G. Freeman, D. Ahlgren, "Noise Performance of a Low Base Resistance 200GHz SiGe Technology," Proc., International Electron Devices Meeting, Dec. 2002, pp. 787-790
3. D. Terpstra, W. Deboer, J.W. Slotboom, "High-performance Si-SiGe HBTs SiGe-technology development in ESPRIT project 8001 TIBIA: an overview," Solid State Electronics, 1997 pp. 1493-1502
4. T. Henderson, "Model for degradation of GaAs/AlGaAs HBTs under temperature and current stress," Proc. IEEE Int'l Electron Devices Meeting 1997, pp. 811-814
5. S. Sugahara, J. Nagano, T. Nittono, K. Ogawa, "Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base," Proc., GaAs IC Symposium 1993, pp 115-118
6. K. Kiziloglu, S. Thomas, F. Williams, B. Paine, "Reliability and failure criteria for AlInAs/GaInAs/InP HBTs," Proc., Indium Phosphide and Related Materials Conference 2000, pp. 294-297.
7. T in a Manufacturable Technology," IEEE Electron Device Letters, vol. 23 no.5, May 2002 pp. 258 -260
8. MAX SiGe HBTs with heavily doped base formed by HCL-free selective epitaxy," Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 2002, pp 139-142
9. K. Schuegraf, M. Racanelli, A. Kalburge, et. al, "0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products" Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 2001, pp 147-150
10. MAX) HBT and ASIC-compatible CMOS using copper interconnect" Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 2001, pp 143-146
11. M. Kondo, T. Kobayashi, Y. Tamaki, "Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors - Part I: band structure in the polysilicon emitter obtained from electrical measurements," IEEE Trans. Electron Devices, vol 42, no 3, March 1995, pp 419-426.
12. S. Jouan, R. Planche, H. Baudry, P. Ribot, J.A. Chroboczek, D. Dutartre, D. Gloria, M. Laurens, P. Llinares, M. Marty, A. Monroy, C. Morin, R. Pantel, A. Perrotin, J. de Pontcharro, J.L. Regolini, G. Vincent, A. Chantre, "A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters," IEEE Trans. Electron Devices, July 1999, pp 1525-1531
13. K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai, "A Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay," Proc. IEEE Int'l Electron Devices Meeting 1997, pp. 795-798
14. B. Heinemann, H. Rucker, R. Barth, et al., "Novel collector design for high-speed SiGe:C HBTs," Proc., International Electron Devices Meeting, Dec. 2002, pp. 775-558
15. D.D. Tang, E. Hackbarth, "Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design," IEEE Trans. Electron Devices, vol. 35 no. 12, Dec 1988, pp. 2101-2107
16. A. Neugroschel, C. -T. Sah, and M. Carroll, "Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress," IEEE Trans. Electron Devices, vol. 43, no. 8, Aug 1996, pp. 1286-1290
17. fe degradation in bipolar output drivers," IEEE Trans. Electron Devices, vol. 42, no. 3, March 1995, pp. 573-574
18. D.D. Tang, E. Hackbarth, T.C. Chen, "On the very-high-current degradations on Si n-p-n transistors," IEEE Trans. Electron Devices, vol. 37, no. 7, July 1990, pp 1698-1706
19. M. S. Carroll, A. Neugroschel, and C. -T. Sah, "Degradation of silicon bipolar junction transistors at high forward current densities," IEEE Trans. Electron Devices, Vol. 44, No. 1, pp. 110-117, 1997.
20. T-C. Chen, C. Kaya, M. B. Ketchen, and T. H. Ning, "Reliability analysis of self-aligned bipolar transistor under forward active current stress," Proc., International Electron Devices Meeting., pp. 650-653, 1986.
21. J.-S. Rieh, K. Watson, A. Joseph, G. Freeman, S. Subbanna "Wafer level forward current reliability analysis of 120GHz production HBTs under accelerated current stress," Proceedings, IRPS 2002 pp.184 -188
22. R.A. Wachnik, T.J. Bucelot, G.P. Li, "Degradation of bipolar transistors under high current stress at 300K," J. Applied Phys. 63(9) May 1988, pp. 4734-4740
23. J. Dunn, D. Harame, S. St Onge, A. Joseph, N. Feilchenfeld, K. Watson, S. Subbanna, "Trends in SiGe BiCMOS Integration and Reliability," Proc. IRPS 2000 pp. 237-242
24. J. Zhao, G. P. Li, K. Y. Liao, M. -R. Chin, J. Y. -C. Sun, and A. La Duca, "Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors," IEEE Electron Device Lett., Vol. 14, No. 5, pp. 252-255, 1993.
25. J. -S. Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman, S. Subbanna, "Structural Dependence of the Thermal Resistance of Trench-Isolated Bipolar Transistors," Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2002, pp. 100 -103
26. E.O. Johnson, "Physical limitations on frequency and power parameters of transistors," RCA Rev. 1965;26:163-177.
27. M. Rickelt and H.M. Rein, E. Rose, "Influence of Impact-Ionization-Induced Instabilities on the Maximum Usable Output Voltage of Si-Bipolar Transistors," IEEE Trans. on Electron Devices v.48 n.4 p.774-783 April 2001
28. G. Zhang, J.D. Cressler, G. Niu and A. Joseph, "A new 'Mixed-mode' base current degradation mechanism in bipolar transistors", IEEE Bipolar Circuit and Technology Meeting, 2002 pp. 32 -35
29. Z. Yang, F. Guarin, Ed Hostetter and Greg Freeman, "Avalanche current induced hot carrier degradation in 200 GHz SiGe Heterojunction Bipolar Transistors," Proc. International Reliability Physics Symposium 2003