Development of A radiation tolerant im SRAM on fully-depleted SOI

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2436-2441

  Brady, F T ^a,b   Brown, R ^b   Rockett, L ^b   Vasquez, J ^b  

^a IEEE   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; LEAKAGE CURRENTS; RADIATION HARDENING; SEMICONDUCTOR STORAGE; SILICON ON INSULATOR TECHNOLOGY;

STATIC RANDOM ACCESS MEMORY (SRAM);

RANDOM ACCESS STORAGE;

EID: 0032313587     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736483     Document Type: Article

References (8)

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2. K. Kumagai, T. Yamada, H. Iwaki, H. Nakamura, H. Onishi, Y. Matsubara, K. Imai, and S. Kurosawa, A New SRAM Cell Design Using 0.35 um CMOS/SIMOX Technology, in 1997 IEEE International SOI Conference Proceedings, p. 174.
3. J.-P. Colinge Fully-Depleted SOI CMOS For Analog Applications, IEEE Transactions On Electron Devices, Vol .45, p. 1010(1998).
4. F.T. Brady, H.L. Hughes, P.J. McMarr, and B. Mrstik, Total Dose Hardening of SIMOX Buried Oxides for Fully Depleted Devices in Rad-Tolerant Applications, in IEEE Trans. Nucl. Science, Vol. 43, p. 2646 (1996).
5. F.T. Brady, N.F. Haddad, J.A. Miller, and J. Seliskar, Temperature Sensitivity of Devices and Circuits Fabricated in Fully Depleted Accumulation Mode CMOS/SOI, in 1992 IEEE International SOI Conference Proceedings, p. 90.
6. F.T. Brady and N.F. Haddad, Manufacturability Considerations for Fully Depleted SOI, in 1993 IEEE International SOI Conference Proceedings, p. 130.
7. F.T. Brady, N.F. Haddad, and L.K.Wang, Effect of Total Dose Radiation on Device Self Latch-Up., in 1992 IEEE International SOI Conference Proceedings, p. 88.
8. F.T. Brady, T. Scott, R.Brown, J. Damato, and N.F. Haddad, Fully-Depleted Submicron SOI For Radiation Hardened Applications, IEEE Transactions on Nuclear Science, Vol. 41, p. 2304 (1994).