X-radiation response of simox buried oxides: Influence of the fabrication process

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 821-825

  Paillet, P ^a   Autran, J L ^a   Flament, O ^a   Leray, J L ^a   Aspar, B ^a   Auberton Herve, A J ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; X RAYS;

BURIED OXIDES; ELECTRON TRAPPING; HOLE TRAPPING; SUPPLEMENTAL IMPLANTATION OXIDES;

SEMICONDUCTOR DEVICES;

EID: 0030172699     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510719     Document Type: Article

References (12)

1. H.E. Boesch, T. L. Taylor, G. A. Brown, "Charge Buildup at High Dose and Low Fields in SIMOX Buried Oxides", IEEE Trans. Nucl. Sci. , NS-38, 6, 1234, (1991).
2. R.E. Slahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman and G. A. Brown, "Electron and Hole Trapping in Irradiated SIMOX, ZMR and BESOI Buried Oxides", IEEE Trans. Nucl. Sci. , NS-39, 6, 2086, (1992).
3. O. Flament, P. Paillet, J.L. Leray, B. Aspar, B. Giffard, A. J. Auberton-Herve "Effect of supplemental dose in SIMOX on very high ionizing dose response", Electrochem. Soc. SOI Symp. Proc. , 382, (1994).
4. B. Aspar, C. Pudda, A.M. Papon, A. J. Auberton-Herve, J. M. Lamure, "Ultra-Thin buried oxide layers formed by Low Dose SIMOX processes", Electrochem. Soc. SOI Symp. Proc. , 62, (1994).
5. B. Aspar, C. Pudda, A. Garcia, C. Guilhalmenc, A.J. Auberton-Hervé, J. M. Lamure, "Low dose SIMOX improvements by additional oxygen implantation", presented at INFOS 95, Villard-de-Lans, France, June 1995.
6. P.J. McWhorter, P. S. Winokur, "Simple Technique for Separating the Effects of Interface Traps and Trapped Oxide Charge in Metal-Oxide-Semiconductor Transistors", Appl. Phys. Lett. 48 (2), 133, (1986).
7. P. Paillet, D. Hervé, J.L. Leray and R. A. B. Devine, "Evidence of negative charge trapping in high temperature annealed thermal oxide", IEEE Trans. Nucl. Sci. , NS-41, 3, 473 (1994).
8. D. Hervé, P. Paillet, J.L. Leray, "Space charge effects in SIMOX buried oxides", IEEE Trans. Nucl. Sci. , NS-41, 3, 466 (1994).
9. 2/Si structures", J. Appl. Phys. 77 (1), 175 (1995).
10. R.E. Stahlbush, H. L. Hughes, and W. A. Krull, "Reduction of Charge Trapping in SIMOX by Supplemental Oxygen Implantation", IEEE Trans. Nucl. Sci. , NS-40, 6, 1740 (1993).
11. R.J. Lambert, T. N. Bahr, and H. L. Hughes, "Effect of an Augmented Oxygen Implant on Electron Trapping in buried oxides", Appl. Phys. Lett. , 64, 3201 (1994).
12. H.E. Boesch Jr. , T. L. Taylor, and W. A. Krull, "Charge Trapping and Transport Properties of SIMOX Buried Oxides with Supplemental Oxygen Implantation", IEEE Trans. Nucl. Sci. , NS-40, 6, 1748 (1993).