SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2965-2968

  Hirose, K ^a   Saito, H ^a   Kuroda, Y ^b   Ishii, S ^b   Fukuoka, Y ^b   Takahashi, D ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

Radiation hardening; Semiconductor device fabrication; Semiconductor memories; Silicon on insulator technology

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ENERGY TRANSFER; FOUNDRY PRACTICE; RADIATION HARDENING; SILICON ON INSULATOR TECHNOLOGY;

RAD-HARD CIRCUIT DESIGNS;

STATIC RANDOM ACCESS STORAGE;

EID: 0036952547     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805978     Document Type: Conference Paper

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