SOI: Materials to Systems

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 3-10

  Auberton Herve A J ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SYSTEM-ON-CHIP; BONDING; COST EFFECTIVENESS; HYDROGEN; ION IMPLANTATION; PRODUCTION ENGINEERING; QUALITY ASSURANCE; RANDOM ACCESS STORAGE; ULSI CIRCUITS;

GIGABIT DRAM; HIGH SPEED SYSTEMS; LARGE VOLUMES; LOW POWER; LOW VOLTAGES; MARKET SEGMENT; PERFORMANCE; PORTABLE SYSTEM; SOI CIRCUITS; VOLUME GROWTH;

WAFER BONDING; SILICON ON INSULATOR TECHNOLOGY;

MATERIAL ENGINEERING; SMART CUT TECHNOLOGY; VOLUME PRODUCTION; WAFER BONDING;

EID: 0030398686     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553028     Document Type: Conference Paper

References (22)

1. T.Oashi, et al, "16Mb DRAM/SOI Technologies for Sub-lV Operation " Submitted to IEDM 1996
2. H.Kim et al VLSI Tech. Dig. P. 143,1995
3. German Patent 439,457 inarch 2,1934 Oscar Heil.
4. M.Wantanabe, A.Tooi JJAP 5 p.737 1966
5. S.S.Iyer et a l, Electrochemical Society meeting extended proceedings on Semiconductor Silicon 1994 PV94-10,p,391
6. M.Bruel, Electron dev letter,31, p.1201,1995
7. A.J.Auberton-Herve et a l, M.Bruel et al Semicon West 1995, Technical program SOI symposium proceeding p.117 1995.
8. B.Asparet al, A.J.Auberton-Herve et al Silicon On Insulator Technologies and Devices Electrochemical Society Proceedings PV 94-11 p62 1994
9. S.Nakashima and K.Izumi,, Journal of.Material research 8,p.523 1993
10. P.B Mumola,G.J.Gardopee, Extended Abstracts of the 1994 Solid State Devices and Materials (SSDM) p.256
11. W.M.Huang et al Proceedings of IEDM 1995 p.59
12. J.Gautier et al Proceedings of IEDM 1995 p.623
13. Y.Yamaguchi et al, "Improvement of leakage current related yield of SOI MOSFET's using Nitrogen ion implantation to the source and drain regions" submitted to I E E E SOI Conference October 1996.
14. M.Yoshimi et al, Proceedings of IEDM 1994 p.429
15. Y.Kado et al, Proceedings of IEDM 1995 p.635
16. Y.Kado, M.Suzuki,K.Koike,Y.Omura,K.Izumi IEEE Journal of Solid State Circuits, Vol28, N°4, April 1993
17. K.Suma,T.Tsuruda,H.Hidaka. & al .Proceedings of ISSCC 1994p.l38
18. T.Tanigawa,A.Yoshino,H.Koga,S.Ohya, Proceedings of 1994 IEEE Symposium on VLSI Technology p.37
19. T.Nishiharaetal Proceedings of IEDM 1992 p.803
20. B.H.Lee, and al T.Barge et al A novel pattern transfer Process for Bonded SOI Gigabit DRAMs, submitted to IEEE SOI conference October 1996.
21. Y. Takahashi et al, IEEE Trans. On Elee. Dev. Vol 43, N°8, August 1996
22. B.Diem et al, Sensors and actuators vol.A21, p.1003 1990