Charge collection in SOI capacitors and circuits and its effect on SEU hardness

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2937-2947

  Schwank, J R ^a   Dodd, P E ^a   Shaneyfelt, M R ^a   Vizkelethy, G ^a   Draper, B L ^a   Hill, T A ^a   Walsh, Dave S ^a   Hash, G L ^a   Doyle, B L ^a   McDaniel, F D ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; INTEGRATED CIRCUIT MANUFACTURE; PERTURBATION TECHNIQUES; SILICON ON INSULATOR TECHNOLOGY;

CHARGE COLLECTION;

CAPACITORS;

EID: 0036947508     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805429     Document Type: Conference Paper

References (16)

1. P. E. Dodd, M. R. Shaneyfelt, K. M. Horn, D. S. Walsh, G. L. Hash, T. A. Hill, B. L. Draper, J. R. Schwank, F. W. Sexton, and P. S. Winokur, "SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, pp. 1893-1903, Dec. 2001.
2. K. Hirose, H. Saito, M. Akiyama, M. Arakaki, Y. Kuroda, S. Ishii, and K. Nakano, "Total-dose and single-event upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules," in Proc. 2001 IEEE Radiation Effects Data Workshop Record, Vancouver, BC, Canada, July 2001, pp. 48-50.
3. S. Ishii and K. Nakano, Private Communication, Mitsubishi Heavy Industries, Nagoya, Japan, 2001.
4. A. B. Campbell and A. R. Knudson, "Charge collection measurements for energetic ions in silicon," IEEE Trans. Nucl. Sci., vol. NS-29, pp. 2067-2071, Dec. 1982.
5. M. A. Xapsos, A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, T. Palmer, T. McDonald, and S. L. Swickert, "Charge collection efficiency related to damage in MOS capacitors," IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1214-1219, Dec. 1987.
6. O. Musseau, J. L. Leray, V. Ferlet, A. Umbert, Y. M. Coic, and P. Hesto, "Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions," IEEE Trans. Nucl. Sci., vol. 38, pp. 1226-1233, Dec. 1991.
7. J. L. Leray, E. Dupont-Nivet, O. Musseau, Y. M. Coic, A. Umbert, P. Lalande, J. F. Pere, A. J. Auberton-Herve, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Troche, and F. Martin, "From substrate to VLSI: Investigation of hardened SIMOX without epitaxy for dose, dose rate and SEU phenomena," IEEE Trans. Nucl. Sci., vol. 35, pp. 1355-1360, Dec. 1988.
8. P. E. Dodd, M. R. Shaneyfelt, D. S. Walsh, J. R. Schwank, G. L. Hash, R. A. Loemker, B. L. Draper, and P. S. Winokur, "Single-event upset and snapback in silicon-on-insulator devices and integrated circuits," IEEE Trans. Nucl. Sci., vol. 47, pp. 2165-2174, Dec. 2000.
9. J. R. Schwank, M. R. Shaneyfelt, B. L. Draper, and P. E. Dodd, "BUSFET - A radiation-hardened SOI transistor," IEEE Trans. Nucl. Sci., vol. 46, pp. 1809-1816, Dec. 1999.
10. K. M. Horn, B. L. Doyle, and F. W. Sexton, "Nuclear microprobe imaging of single-event upsets," IEEE Trans. Nucl. Sci., vol. 39, pp. 7-12, Feb. 1992.
11. M. B. H. Breese, P. J. C. King, G. W. Grime, and F. Watt, "Microcircuit imaging using an ion-beam induced charge," J. Appl. Phys., vol. 72, pp. 2097-2104, 1992.
12. H. Schone, D. S. Walsh, F. W. Sexton, B. L. Doyle, P. E. Dodd, J. F. Aurand, R. S. Flores, and N. Wing, "Time-resolved ion beam inducd charge collection (TRIBICC) in micro-electronics," IEEE Trans. Nucl. Sci., vol. 45, pp. 2544-2549, Dec. 1998.
13. Davinci 2000.4 User's Manual, Avant! Corp., 2000.
14. B. J. Mrstik, H. L. Hughes, P. J. McMarr, R. K. Lawrence, D. I. Ma, I. P. Isaacson, and R. A. Walker, "Hole and electron trapping in ion implanted thermal oxides and SIMOX," IEEE Trans. Nucl. Sci., vol. 47, pp. 2189-2195, Dec. 2000.
15. P. E. Dodd and F. W. Sexton, "Critical charge concepts for CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 42, pp. 1764-1771, Dec. 1995.
16. G. Vizkelethy, B. L. Doyle, F. D. McDaniel, P. Rossi, and P. E. Dodd, "High LET radiation effects microscopy for ICS," in Proc. 2002 IEEE Radiation Effects Data Workshop Record, Phoenix, AZ, July 2002.