SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2206-2211

Optimal, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

(3) Araiza, J J a Aguilar Frutis, M A b Falcony, C c

a DEPARTAMENTO DE FÍSICA (Mexico)

b INSTITUTO POLITÉCNICO NACIONAL (Mexico)

c INSTITUTO POLITÉCNICO NACIONAL (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; PERMITTIVITY; PLASMA DENSITY; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; SUBSTRATES; SURFACE ROUGHNESS; TEMPERATURE; THIN FILMS;

DEGREE OF CRYSTALLINITY; DEPOSITION RATE; GRAZING ANGLE; YTTRIUM OXIDE;

YTTRIUM COMPOUNDS;

EID: 0035519135 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1418399 Document Type: Article

Times cited : (12)

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