InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 729-736

  Kovsh, A R ^a   Maleev, N A ^a   Zhukov, A E ^a   Mikhrin, S S ^a   Vasil'ev, A P ^a   Semenova, E A ^a   Shernyakov, Yu M ^a   Maximov, M V ^a   Livshits, D A ^a   Ustinov, V M ^a   Ledentsov, N N ^a,b   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

QUANTUM DOT (QD) LASERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037382726     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02506-X     Document Type: Conference Paper

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