Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ ≈ 800 nm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 631-636

  Oster, Andrea ^a   Bugge, F ^a   Erbert, Götz ^a   Wenzel, Hans ^a,b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GAIN MEASUREMENT; MODAL ANALYSIS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SPECTRUM ANALYSIS; STRAIN MEASUREMENT; WAVEGUIDE COMPONENTS;

ALUMINUM FREE; BROAD AREA LASER PARAMETERS; CURRENT INJECTION; MODAL GAIN SPECTRA; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE PHOSPHIDE; STRAIN COMPENSATION; STRAINED QUANTUM WELL; TRANSPARENCY CURRENT DENSITY; VARIABLE STRIPE LENGTH METHOD;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033124034     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788428     Document Type: Article

References (12)

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