Prevention of gain saturation by multi-layer quantum dot lasers

Electronics Letters

Volumn 32, Issue 14, 1996, Pages 1302-1304

  Schmidt, O G ^a   Kirstaedter, N ^a   Ledentsov, N M ^a   Mao, M H ^a   Bimberg, D ^a   Ustinov, V M ^a   Egorov, A Y ^a   Zhukov, A E ^a   Maximov, M V ^a   Kop'ev, P S ^a   Alferov, Z I ^a  

^a NONE

Author keywords

Semiconductor junction lasers; Semiconductor quantum dots

Indexed keywords

CAVITY RESONATORS; CHARGE CARRIERS; CURRENT DENSITY; GAIN CONTROL; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDES;

GAIN SATURATION; LASER LENGTH; MULTILAYER QUANTUM DOT LASERS; SINGLE LAYER QUANTUM DOT LASERS; THERMAL COUPLING; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030568668     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960851     Document Type: Article

References (5)

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2. ARAKAWA, Y., and SAKAKI, H.: 'Multidimensional quantum well laser and temperature dependence of its threshold current', Appl. Phys. Lett., 1982, 40, (11), pp. 939-941
3. 0 injection laser emission from (InGa)As quantum dots', Electron. Lett., 1994, 30, (17), pp. 1416-1417
4. KIRSTAEDTER, N., SCHMIDT, O.G., LEDENTSOV, N.N., BIMBERG, D., USTINOV, V.M., EGOROV, A.Y., ZHUKOV, A.E., MAXIMOV, M.V., KOP'EV, P.S., and ALFEROV, Z.I.: 'Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers', Appl. Phys. Lett., (to be published)
5. BIMBERG, D., LEDENTSOV, N.N., GRUNDMANN, M., KIRSTAEDTER, N., SCHMIDT, O.G., MAO, M.H., USTINOV, V.M., EGOROV, A.Y., ZHUKOV, A.E., KOP'EV, P.S., ALFEROV, Z.I., RUVIMOV, S.S., GÖSELE, U., and HEYDENREICH, J.: 'InAs-GaAs quantum dots: From growth to lasers', Phys. Status Solidi, 1996, 194, pp. 159-173