Vibrational study on the carbonization of Si surface

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 531-534

  Kamata, I ^a   Tsuchida, H ^a   Jikimoto, T ^a   Izumi, K ^a  

^a Ctrl Res Inst Elec Pwr I   (Japan)

Author keywords

3C SiC; Carbonization; FT IR ATR; Vibrational mode

Indexed keywords

CARBONIZATION; CHEMICAL BONDS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; SEMICONDUCTING SILICON; SILICON CARBIDE; SURFACE ROUGHNESS;

ATTENUATED TOTAL REFLECTION (ATR) SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032682532     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00467-X     Document Type: Article

References (11)

1. Mogab C.J., Leamy H.J. J. Appl. Phys. 45:1974;1075.
2. Nishino S., Powell J.A., Will H.A. Appl. Phys. Lett. 42:1983;460.
3. Powell J.A., Matus L.G., Kuczmarski M.A. J. Electrochem. Soc. 134:1987;1558.
4. Steckl A.J., Li J.P. IEEE Trans. Electron. Devices. 39:1992;64.
5. Li J.P., Steckl A.J. J. Electrochem. Soc. 142:1995;634.
6. Zorman C.A., Fleischman A.J, Dewa A.S. et al. J. Appl. Phys. 78:1995;5136.
7. Hattori T. Solid State Mater. Sci. 20:1995;339.
8. Tsuchida H., Kamata I., Izumi K. Appl. Phys. Lett. 70:1997;3072.
9. Lucovsky G. Solid State Commun. 29:1979;571.
10. Higashi G.S., Chabal Y.J., Trucks G.W., Raghavachari K. Appl. Phys. Lett. 56:1990;656.
11. Izena A., Sakuraba M., Matsuura T., Murota J. J. Crystal Growth. 188:1998;131.