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Volumn 397, Issue 1-3, 1998, Pages

Real-time scanning tunneling microscopy observation of Si(100)-(2 × 1)→(2 × n)→c(4 × 4) structural phase transitions

Author keywords

Scanning tunneling microscopy; Silicon; Surface thermodynamics

Indexed keywords

ANNEALING; NUCLEATION; PHASE TRANSITIONS; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; SURFACE STRUCTURE; THERMODYNAMIC STABILITY;

EID: 0031991971     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00868-6     Document Type: Article
Times cited : (15)

References (33)
  • 29
    • 0006971547 scopus 로고
    • -8 Torr and >600°C leads only to step retraction due to the fact that diffusion of DVs to steps occurs faster than the creation of new vacancies [11]. Also, sublimation proceeds at >825°C via the detachment of atoms from steps, as shown in M. Mundschau, E. Bauer, W. Telieps, Surf. Sci. 223 (1989) 413.
    • (1989) Surf. Sci. , vol.223 , pp. 413
    • Mundschau, M.1    Bauer, E.2    Telieps, W.3
  • 30
    • 0042113262 scopus 로고    scopus 로고
    • note
    • The incorporation of the parallel ad-dimer into c(4 × 4) regions requires the concerted removal of ordinary dimers, since the atomic density of the c(4 × 4) structure is lower than that of (2 × 1). This poses no difficulty in our model, since surface atoms are quite mobile at > 590°C. The additional atoms simply diffuse and incorporate into step edges, leading to step advance (particularly the down step of a (n × 2) terrace), as evident from the uneven size of two alternate terraces in Fig. 1h.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.