Optimization of the carbonized buffer layer for the growth of high quality single crystal SiC on Si

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Cloitre, T ^a   Moreaud, N ^a   Vicente, P ^a   Sadowski, M ^a   Moret, M ^a   Aulombard, R L ^a  

^a SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONIZATION; CHEMICAL REACTORS; EPITAXIAL GROWTH; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; PROPANE; SILANES; SILICON; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

COLD WALL VERTICAL REACTOR; INFRARED REFLECTIVITY;

SILICON CARBIDE;

EID: 0034869166     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)