How to grow unstrained 3C-SiC heteroepitaxial layers on Si(100) substrates

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 155-158

  Chassagne, T ^a   Ferro, G ^a   Gourbeyre, C ^b   Le Berre, M ^b   Barbier, D ^b   Monteil, Y ^a  

^a UNIVERSITÉ LYON 1   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBURIZING; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; RESIDUAL STRESSES; SILICON WAFERS; STRAIN; TENSILE STRESS; X RAY DIFFRACTION ANALYSIS;

COMPRESSIVE STRAIN; HETEROEPITAXIAL LAYERS; STRESS MEASUREMENT;

SILICON CARBIDE;

EID: 0035119633     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.155     Document Type: Article

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