SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 433-435, Issue , 1999, Pages 397-400

Influence of carbon on the formation of the Si(001) c (4 × 4) surface reconstruction

(2) Norenberg H a Briggs, G A D a

a UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

c (4 4); RHEED; Silicon; STM; Surface reconstruction

Indexed keywords

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARBON; CRACK INITIATION; DEFECTS; HIGH TEMPERATURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SURFACE STRUCTURE; SURFACES;

HIGH BIAS VOLTAGES; SCREENING EFFECTS; SUBSURFACE DEFECTS; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0342656612 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00111-9 Document Type: Article

Times cited : (15)

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