Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization

Journal of Applied Physics

Volumn 80, Issue 8, 1996, Pages 4691-4702

  Ferro, G ^a   Monteil, Y ^a   Vincent, H ^a   Thevenot, V ^a   Tran, Min Duc ^b   Cauwet, F ^a   Bouix, J ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000745853     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363453     Document Type: Article

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