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Volumn 7, Issue 6, 1998, Pages

Advances in cubic silicon carbide surfaces and self-organized one dimensional sub-nanoscale objects

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; NANOTECHNOLOGY; PHASE TRANSITIONS; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SYNCHROTRON RADIATION;

EID: 11644309662     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (10)

References (55)
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    • note
    • In addition to supporting the alternately up- and down- dimer (AUDD) model [36] for the c(4x2) β-SiC(100) surface reconstruction, total energy ab-initio DMol cluster calculations reveal that the Si-Si dimers have also alternating lengths with the up-dimer being longer that the down-dimer; L. Douillard, B. Delley, P. Soukiassian and E. Wimmer, recent ab-initio DMol calculations.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.