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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 131-136

Low-temperature reaction of CH4 on Si(1 0 0)

(4) Izena, A a Sakuraba, M a Matsuura, T a Murota, J a

a TOHOKU UNIVERSITY (Japan)

Author keywords

4 fold periodic structure; CH4; Diffusion of C; Langmuir type; Si(1 0 0) surface; Surface reaction

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; METHANE; REACTION KINETICS; SURFACE PHENOMENA;

LANGMUIR EQUATION; ULTRACLEAN VERTICAL TYPE HOT WALL LPCVD;

SEMICONDUCTING SILICON;

EID: 0032097685 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00076-1 Document Type: Article

Times cited : (30)

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