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Volumn 61-62, Issue , 1999, Pages 553-558
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Influence of the heating ramp on the heteroepitaxial growth of SiC on Si
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DIFFUSION IN SOLIDS;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
SILICON WAFERS;
THERMAL CYCLING;
HETEROEPITAXY;
RAPID THERMAL CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0032661858
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00472-3 Document Type: Article |
Times cited : (23)
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References (21)
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