Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer

Thin Solid Films

Volumn 335, Issue 1-2, 1998, Pages 32-36

  Uchida, Masao ^a   Kitabatake, Makoto ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

3C SiC; Chemical vapor deposition; Heteroepitaxial growth; Molecular beam epitaxy; Surface structure controlled epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; SUBSTRATES;

HETEROEPITAXIAL GROWTH; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; SURFACE-STRUCTURE-CONTROLLED MOLECULAR BEAM EPITAXY LAYER;

THIN FILMS;

EID: 0032306108     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00870-0     Document Type: Article

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