A comprehensive study of SiC growth processes in a VPE reactor

Thin Solid Films

Volumn 402, Issue 1-2, 2002, Pages 83-89

  Chassagne, Thierry ^a   Ferro, Gabriel ^a   Chaussende, Didier ^a   Cauwet, François ^a   Monteil, Yves ^a   Bouix, Jean ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

Epitaxy; Growth mechanism; Silicon; Silicon carbide

Indexed keywords

PARTIAL PRESSURE; PHASE COMPOSITION; VAPOR PHASE EPITAXY;

GAS PHASE COMPOSITION;

SILICON CARBIDE;

EID: 0036150245     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01597-8     Document Type: Article

References (14)